MUN5132T1G vs MUN5136T1G

Product Attributes

Part Number MUN5132T1G MUN5136T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
MUN5132T1G MUN5136T1G
Product Status Active Active
Transistor Type PNP - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V -
Resistor - Base (R1) 4.7 kOhms -
Resistor - Emitter Base (R2) 4.7 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA -
Current - Collector Cutoff (Max) 500nA -
Frequency - Transition - -
Power - Max 202 mW -
Mounting Type Surface Mount -
Package / Case SC-70, SOT-323 -
Supplier Device Package SC-70-3 (SOT323) -