MUN5111T1G vs MUN5116T1G

Product Attributes

Part Number MUN5111T1G MUN5116T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
MUN5111T1G MUN5116T1G
Product Status Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 10 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 10 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - -
Power - Max 202 mW 202 mW
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323)