MTV32N20E vs MTW32N20E

Product Attributes

Part Number MTV32N20E MTW32N20E
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
MTV32N20E MTW32N20E
Product Status Active Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 200 V
Current - Continuous Drain (Id) @ 25°C - 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 75mOhm @ 16A, 10V
Vgs(th) (Max) @ Id - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 120 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 5000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 180W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Through Hole
Supplier Device Package - TO-247
Package / Case - TO-247-3