MSD601-RT1G vs MSD602-RT1G

Product Attributes

Part Number MSD601-RT1G MSD602-RT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MSD601-RT1G MSD602-RT1G
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max) 100nA 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA, 10V 120 @ 150mA, 10V
Power - Max 200 mW 200 mW
Frequency - Transition - -
Operating Temperature - 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59 SC-59