MSC080SMA120B vs MSC080SMA120J

Product Attributes

Part Number MSC080SMA120B MSC080SMA120J
Manufacturer Microchip Technology Microchip Technology
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
MSC080SMA120B MSC080SMA120J
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc) 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V -
Rds On (Max) @ Id, Vgs 100mOhm @ 15A, 20V -
Vgs(th) (Max) @ Id 2.8V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 20 V -
Vgs (Max) +23V, -10V -
Input Capacitance (Ciss) (Max) @ Vds 838 pF @ 1000 V -
FET Feature - -
Power Dissipation (Max) 200W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Chassis Mount
Supplier Device Package TO-247-3 SOT-227 (ISOTOP®)
Package / Case TO-247-3 SOT-227-4, miniBLOC