MSB709-RT1 vs MSB709-RT1G

Product Attributes

Part Number MSB709-RT1 MSB709-RT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MSB709-RT1 MSB709-RT1G
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA, 10V 210 @ 2mA, 10V
Power - Max 200 mW 200 mW
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59 SC-59