MRF8372GR1 vs MRF8372GR2

Product Attributes

Part Number MRF8372GR1 MRF8372GR2
Manufacturer Microsemi Corporation Microsemi Corporation
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
MRF8372GR1 MRF8372GR2
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 16V 16V
Frequency - Transition 870MHz 870MHz
Noise Figure (dB Typ @ f) - -
Gain 8dB ~ 9.5dB 8dB ~ 9.5dB
Power - Max 2.2W 2.2W
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 5V 30 @ 50mA, 5V
Current - Collector (Ic) (Max) 200mA 200mA
Operating Temperature - -
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO