MRF581A vs MRF581AG

Product Attributes

Part Number MRF581A MRF581AG
Manufacturer Microsemi Corporation Microsemi Corporation
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
MRF581A MRF581AG
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V
Frequency - Transition 5GHz 5GHz
Noise Figure (dB Typ @ f) 3dB ~ 3.5dB @ 500MHz 3dB ~ 3.5dB @ 500MHz
Gain 13dB ~ 15.5dB 13dB ~ 15.5dB
Power - Max 1.25W 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 50mA, 5V 90 @ 50mA, 5V
Current - Collector (Ic) (Max) 200mA 200mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case Micro-X ceramic (84C) Macro-X
Supplier Device Package Micro-X ceramic (84C) Macro-X