| Part Number | MRF581G | MRF5812 |
|---|---|---|
| Manufacturer | Microsemi Corporation | Microsemi Corporation |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 18V | 15V |
| Frequency - Transition | 5GHz | 5GHz |
| Noise Figure (dB Typ @ f) | 3dB ~ 3.5dB @ 500MHz | 2dB ~ 3dB @ 500MHz |
| Gain | 13dB ~ 15.5dB | 13dB ~ 15.5dB |
| Power - Max | 1.25W | 1.25W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V | 50 @ 50mA, 5V |
| Current - Collector (Ic) (Max) | 200mA | 200mA |
| Operating Temperature | 150°C (TJ) | - |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | Micro-X ceramic (84C) | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | Micro-X ceramic (84C) | 8-SOIC |