MRF553G vs MRF559G

Product Attributes

Part Number MRF553G MRF559G
Manufacturer Microsemi Corporation Microsemi Corporation
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
MRF553G MRF559G
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 16V 16V
Frequency - Transition 175MHz 870MHz
Noise Figure (dB Typ @ f) - -
Gain 11dB ~ 13dB 9.5dB
Power - Max 3W 2W
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 250mA, 5V 30 @ 50mA, 10V
Current - Collector (Ic) (Max) 500mA 150mA
Operating Temperature - -
Mounting Type Surface Mount Surface Mount
Package / Case Power Macro Micro-X ceramic (84C)
Supplier Device Package Power Macro Micro-X ceramic (84C)