MPSH10RLRAG vs MPSH17RLRAG

Product Attributes

Part Number MPSH10RLRAG MPSH17RLRAG
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
MPSH10RLRAG MPSH17RLRAG
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 25V 15V
Frequency - Transition 650MHz 800MHz
Noise Figure (dB Typ @ f) - 6dB @ 200MHz
Gain - 24dB
Power - Max 350mW 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V 25 @ 5mA, 10V
Current - Collector (Ic) (Max) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226)