MPSH17G vs MPSH10G

Product Attributes

Part Number MPSH17G MPSH10G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
MPSH17G MPSH10G
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 25V
Frequency - Transition 800MHz 650MHz
Noise Figure (dB Typ @ f) 6dB @ 200MHz -
Gain 24dB -
Power - Max 350mW 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 5mA, 10V 60 @ 4mA, 10V
Current - Collector (Ic) (Max) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226)