MPSH17 vs MPSH17G

Product Attributes

Part Number MPSH17 MPSH17G
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
MPSH17 MPSH17G
Product Status Active Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 15V
Frequency - Transition 800MHz 800MHz
Noise Figure (dB Typ @ f) 6dB @ 200MHz 6dB @ 200MHz
Gain 24dB 24dB
Power - Max 350mW 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 5mA, 10V 25 @ 5mA, 10V
Current - Collector (Ic) (Max) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92-3 TO-92 (TO-226)