MPSH10_D27Z vs MPSH11_D27Z

Product Attributes

Part Number MPSH10_D27Z MPSH11_D27Z
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
MPSH10_D27Z MPSH11_D27Z
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 25V 25V
Frequency - Transition 650MHz 650MHz
Noise Figure (dB Typ @ f) - -
Gain - -
Power - Max 350mW 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V 60 @ 4mA, 10V
Current - Collector (Ic) (Max) 50mA 50mA
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3