MPSH10RLRA vs MPSH10RLRAG

Product Attributes

Part Number MPSH10RLRA MPSH10RLRAG
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
MPSH10RLRA MPSH10RLRAG
Product Status Obsolete Obsolete
Transistor Type - NPN
Voltage - Collector Emitter Breakdown (Max) - 25V
Frequency - Transition - 650MHz
Noise Figure (dB Typ @ f) - -
Gain - -
Power - Max - 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce - 60 @ 4mA, 10V
Current - Collector (Ic) (Max) - -
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Through Hole
Package / Case - TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package - TO-92 (TO-226)