MPSH10 vs MPSH10G

Product Attributes

Part Number MPSH10 MPSH10G
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
MPSH10 MPSH10G
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 25V 25V
Frequency - Transition 650MHz 650MHz
Noise Figure (dB Typ @ f) - -
Gain - -
Power - Max 350mW 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V 60 @ 4mA, 10V
Current - Collector (Ic) (Max) - -
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case - TO-226-3, TO-92-3 Long Body
Supplier Device Package - TO-92 (TO-226)