| Part Number | MPS3563 | MPS3563G |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V | 12V |
| Frequency - Transition | 1.5GHz | 1.5GHz |
| Noise Figure (dB Typ @ f) | 6.5dB @ 60MHz | 6.5dB @ 60MHz |
| Gain | 14dB @ 200MHz | 14dB @ 200MHz |
| Power - Max | 350W | 350W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8mA, 10V | 20 @ 8mA, 10V |
| Current - Collector (Ic) (Max) | 50mA | 50mA |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92 | TO-92 |