MMUN2132LT1G vs MMUN2132LT1

Product Attributes

Part Number MMUN2132LT1G MMUN2132LT1
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
MMUN2132LT1G MMUN2132LT1
Product Status Active Obsolete
Transistor Type PNP - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V -
Resistor - Base (R1) 4.7 kOhms -
Resistor - Emitter Base (R2) 4.7 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA -
Current - Collector Cutoff (Max) 500nA -
Frequency - Transition - -
Power - Max 246 mW -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) -