MMUN2112LT1G vs MMUN2111LT1G

Product Attributes

Part Number MMUN2112LT1G MMUN2111LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
MMUN2112LT1G MMUN2111LT1G
Product Status Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased + Diode
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 22 kOhms 10 kOhms
Resistor - Emitter Base (R2) 22 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - -
Power - Max 246 mW 246 mW
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)