| Part Number | MMJT350T1G | MMJT350T1 |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Obsolete |
| Transistor Type | PNP | PNP |
| Current - Collector (Ic) (Max) | 500 mA | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V | 300 V |
| Vce Saturation (Max) @ Ib, Ic | - | - |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V | 30 @ 50mA, 10V |
| Power - Max | 650 mW | 2.75 W |
| Frequency - Transition | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 (TO-261) | SOT-223 (TO-261) |