MMIX1X200N60B3H1 vs MMIX1X100N60B3H1

Product Attributes

Part Number MMIX1X200N60B3H1 MMIX1X100N60B3H1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
MMIX1X200N60B3H1 MMIX1X100N60B3H1
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 175 A 145 A
Current - Collector Pulsed (Icm) 1000 A 440 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 100A 1.8V @ 15V, 70A
Power - Max 520 W 400 W
Switching Energy 2.85mJ (on), 2.9mJ (off) 1.9mJ (on), 2mJ (off)
Input Type Standard Standard
Gate Charge 315 nC 143 nC
Td (on/off) @ 25°C 48ns/160ns 30ns/120ns
Test Condition 360V, 100A, 1Ohm, 15V 360V, 70A, 2Ohm, 15V
Reverse Recovery Time (trr) 100 ns 140 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 24-PowerSMD, 21 Leads 24-PowerSMD, 21 Leads
Supplier Device Package 24-SMPD 24-SMPD