MMDT5451Q-7 vs MMDT5451-7

Product Attributes

Part Number MMDT5451Q-7 MMDT5451-7
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
MMDT5451Q-7 MMDT5451-7
Product Status Active Obsolete
Transistor Type NPN, PNP NPN, PNP
Current - Collector (Ic) (Max) 200mA 200mA
Voltage - Collector Emitter Breakdown (Max) 160V, 150V 160V, 150V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA, 500mV @ 5mA, 50mA 200mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V / 60 @ 10mA, 5V 80 @ 10mA, 5V / 60 @ 10mA, 5V
Power - Max 200mW 200mW
Frequency - Transition 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363