| Part Number | MMDT4126-7 | MMDT4146-7 |
|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Category | Transistors - Bipolar (BJT) - Arrays | Transistors - Bipolar (BJT) - Arrays |
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| Product Status | Obsolete | Active |
| Transistor Type | 2 PNP (Dual) | - |
| Current - Collector (Ic) (Max) | 200mA | - |
| Voltage - Collector Emitter Breakdown (Max) | 25V | - |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA | - |
| Current - Collector Cutoff (Max) | 50nA (ICBO) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 1V | - |
| Power - Max | 200mW | - |
| Frequency - Transition | 250MHz | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | - |
| Supplier Device Package | SOT-363 | - |