MMDT2227-7-F vs MMDT2227Q-7-F

Product Attributes

Part Number MMDT2227-7-F MMDT2227Q-7-F
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
MMDT2227-7-F MMDT2227Q-7-F
Product Status Active Active
Transistor Type NPN, PNP NPN, PNP Complementary
Current - Collector (Ic) (Max) 600mA 600mA
Voltage - Collector Emitter Breakdown (Max) 40V, 60V 40V, 60V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA, 1.6V @ 50mA, 500mA 1V @ 50mA, 500mA, 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA, 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 200mW 200mW
Frequency - Transition 300MHz, 200MHz 300MHz, 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363