MMBTH10LT1G vs MMBTH10LT3G

Product Attributes

Part Number MMBTH10LT1G MMBTH10LT3G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
MMBTH10LT1G MMBTH10LT3G
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 25V 25V
Frequency - Transition 650MHz 650MHz
Noise Figure (dB Typ @ f) - -
Gain - -
Power - Max 225mW 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V 60 @ 4mA, 10V
Current - Collector (Ic) (Max) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)