MMBTH10LT1G vs MMBTH10LT1

Product Attributes

Part Number MMBTH10LT1G MMBTH10LT1
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
MMBTH10LT1G MMBTH10LT1
Product Status Active Obsolete
Transistor Type NPN -
Voltage - Collector Emitter Breakdown (Max) 25V -
Frequency - Transition 650MHz -
Noise Figure (dB Typ @ f) - -
Gain - -
Power - Max 225mW -
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V -
Current - Collector (Ic) (Max) - -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) -