| Part Number | MMBTH10-7-F | MMBTH10Q-7-F |
|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
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| Product Status | Active | Active |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V | 25V |
| Frequency - Transition | 650MHz | 650MHz |
| Noise Figure (dB Typ @ f) | - | - |
| Gain | - | - |
| Power - Max | 300mW | 310mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V | 60 @ 4mA, 10V |
| Current - Collector (Ic) (Max) | 50mA | 50mA |
| Operating Temperature | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 | SOT-23-3 |