MMBTA63LT1G vs MMBTA93LT1G

Product Attributes

Part Number MMBTA63LT1G MMBTA93LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBTA63LT1G MMBTA93LT1G
Product Status Active Obsolete
Transistor Type PNP - Darlington PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 200 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 100nA (ICBO) 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 100mA, 5V 25 @ 30mA, 10V
Power - Max 225 mW 300 mW
Frequency - Transition 125MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)