MMBTA56LT1G vs MMBTA56LT1

Product Attributes

Part Number MMBTA56LT1G MMBTA56LT1
Manufacturer onsemi Infineon Technologies
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBTA56LT1G MMBTA56LT1
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 225 mW 225 mW
Frequency - Transition 50MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)