MMBTA13LT1G vs MMBTA13LT3G

Product Attributes

Part Number MMBTA13LT1G MMBTA13LT3G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBTA13LT1G MMBTA13LT3G
Product Status Active Active
Transistor Type NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 300 mA 300 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V 10000 @ 100mA, 5V
Power - Max 225 mW 225 mW
Frequency - Transition 125MHz 125MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)