MMBT6521LT1G vs MMBT6521LT1

Product Attributes

Part Number MMBT6521LT1G MMBT6521LT1
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBT6521LT1G MMBT6521LT1
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 500nA (ICBO) 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 2mA, 10V 300 @ 2mA, 10V
Power - Max 225 mW 225 mW
Frequency - Transition - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)