MMBT6521LT1G vs MMBT6520LT1G

Product Attributes

Part Number MMBT6521LT1G MMBT6520LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBT6521LT1G MMBT6520LT1G
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 100 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 25 V 350 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA 1V @ 5mA, 50mA
Current - Collector Cutoff (Max) 500nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 2mA, 10V 20 @ 50mA, 10V
Power - Max 225 mW 225 mW
Frequency - Transition - 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)