MMBT6429LT1G vs MMBT6429LT1

Product Attributes

Part Number MMBT6429LT1G MMBT6429LT1
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBT6429LT1G MMBT6429LT1
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100µA, 5V 500 @ 100µA, 5V
Power - Max 225 mW 225 mW
Frequency - Transition 700MHz 700MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)