MMBT6429LT1G vs MMBT6427LT1G

Product Attributes

Part Number MMBT6429LT1G MMBT6427LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBT6429LT1G MMBT6427LT1G
Product Status Active Active
Transistor Type NPN NPN - Darlington
Current - Collector (Ic) (Max) 200 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 40 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max) 100nA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100µA, 5V 20000 @ 100mA, 5V
Power - Max 225 mW 225 mW
Frequency - Transition 700MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)