MMBT6427LT1G vs MMBT6427LT1

Product Attributes

Part Number MMBT6427LT1G MMBT6427LT1
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBT6427LT1G MMBT6427LT1
Product Status Active Obsolete
Transistor Type NPN - Darlington -
Current - Collector (Ic) (Max) 500 mA -
Voltage - Collector Emitter Breakdown (Max) 40 V -
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500µA, 500mA -
Current - Collector Cutoff (Max) 1µA -
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V -
Power - Max 225 mW -
Frequency - Transition - -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) -