MMBT5550LT3G vs MMBT5550LT1G

Product Attributes

Part Number MMBT5550LT3G MMBT5550LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBT5550LT3G MMBT5550LT1G
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 140 V 140 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V 60 @ 10mA, 5V
Power - Max 225 mW 225 mW
Frequency - Transition - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)