MMBT5550LT1G vs MMBT5550LT1

Product Attributes

Part Number MMBT5550LT1G MMBT5550LT1
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBT5550LT1G MMBT5550LT1
Product Status Active Obsolete
Transistor Type NPN -
Current - Collector (Ic) (Max) 600 mA -
Voltage - Collector Emitter Breakdown (Max) 140 V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA -
Current - Collector Cutoff (Max) 100nA -
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V -
Power - Max 225 mW -
Frequency - Transition - -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) -