MMBT5088LT1G vs MMBT5089LT1G

Product Attributes

Part Number MMBT5088LT1G MMBT5089LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBT5088LT1G MMBT5089LT1G
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 50 mA 50 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 25 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 50nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100µA, 5V 400 @ 100µA, 5V
Power - Max 300 mW 300 mW
Frequency - Transition 50MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)