MMBT5087LT1G vs MMBT5087LT1

Product Attributes

Part Number MMBT5087LT1G MMBT5087LT1
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBT5087LT1G MMBT5087LT1
Product Status Active Obsolete
Transistor Type PNP -
Current - Collector (Ic) (Max) 50 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V -
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA -
Current - Collector Cutoff (Max) 50nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100µA, 5V -
Power - Max 300 mW -
Frequency - Transition 40MHz -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) -