MMBT4401LT1G vs MMBT4401WT1G

Product Attributes

Part Number MMBT4401LT1G MMBT4401WT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBT4401LT1G MMBT4401WT1G
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 1V 100 @ 150mA, 1V
Power - Max 300 mW 150 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SOT-23-3 (TO-236) SC-70-3 (SOT323)