MMBT4401LT1G vs MMBT4401LT1H

Product Attributes

Part Number MMBT4401LT1G MMBT4401LT1H
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBT4401LT1G MMBT4401LT1H
Product Status Active Active
Transistor Type NPN -
Current - Collector (Ic) (Max) 600 mA -
Voltage - Collector Emitter Breakdown (Max) 40 V -
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 1V -
Power - Max 300 mW -
Frequency - Transition 250MHz -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) -