MMBT2369LT1 vs MMBT2369LT1G

Product Attributes

Part Number MMBT2369LT1 MMBT2369LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MMBT2369LT1 MMBT2369LT1G
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 15 V 15 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) - 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 350mV 40 @ 10mA, 350mV
Power - Max 225 mW 225 mW
Frequency - Transition - -
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)