MJW21196G vs MJW21196

Product Attributes

Part Number MJW21196G MJW21196
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJW21196G MJW21196
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 16 A 16 A
Voltage - Collector Emitter Breakdown (Max) 250 V 250 V
Vce Saturation (Max) @ Ib, Ic 3V @ 3.2A, 16A 3V @ 3.2A, 16A
Current - Collector Cutoff (Max) 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A, 5V 20 @ 8A, 5V
Power - Max 200 W 200 W
Frequency - Transition 4MHz 4MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3