MJW21193G vs MJW21192G

Product Attributes

Part Number MJW21193G MJW21192G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJW21193G MJW21192G
Product Status Active Obsolete
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 16 A 8 A
Voltage - Collector Emitter Breakdown (Max) 250 V 150 V
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A 2V @ 1.6A, 8A
Current - Collector Cutoff (Max) 100µA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A, 5V 15 @ 4A, 2V
Power - Max 200 W 125 W
Frequency - Transition 4MHz 4MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3