MJE200STU vs MJE800STU

Product Attributes

Part Number MJE200STU MJE800STU
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJE200STU MJE800STU
Product Status Active Obsolete
Transistor Type NPN NPN - Darlington
Current - Collector (Ic) (Max) 5 A 4 A
Voltage - Collector Emitter Breakdown (Max) 25 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 100nA (ICBO) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A, 1V 750 @ 1.5A, 3V
Power - Max 15 W 40 W
Frequency - Transition 65MHz -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3