MJE5852G vs MJE5850G

Product Attributes

Part Number MJE5852G MJE5850G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJE5852G MJE5850G
Product Status Active Last Time Buy
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 400 V 300 V
Vce Saturation (Max) @ Ib, Ic 5V @ 3A, 8A 5V @ 3A, 8A
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 5A, 5V 5 @ 5A, 5V
Power - Max 80 W 80 W
Frequency - Transition - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220