MJE5742G vs MJE5740G

Product Attributes

Part Number MJE5742G MJE5740G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJE5742G MJE5740G
Product Status Active Active
Transistor Type NPN - Darlington -
Current - Collector (Ic) (Max) 8 A -
Voltage - Collector Emitter Breakdown (Max) 400 V -
Vce Saturation (Max) @ Ib, Ic 3V @ 400mA, 8A -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A, 5V -
Power - Max 2 W -
Frequency - Transition - -
Operating Temperature -65°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-220-3 -
Supplier Device Package TO-220 -