MJE5730G vs MJE5740G

Product Attributes

Part Number MJE5730G MJE5740G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJE5730G MJE5740G
Product Status Active Active
Transistor Type PNP -
Current - Collector (Ic) (Max) 1 A -
Voltage - Collector Emitter Breakdown (Max) 300 V -
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A -
Current - Collector Cutoff (Max) 1mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V -
Power - Max 40 W -
Frequency - Transition 10MHz -
Operating Temperature -65°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-220-3 -
Supplier Device Package TO-220 -