MJE5730G vs MJE5730

Product Attributes

Part Number MJE5730G MJE5730
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJE5730G MJE5730
Product Status Active Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A 1V @ 200mA, 1A
Current - Collector Cutoff (Max) 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V 30 @ 300mA, 10V
Power - Max 40 W 40 W
Frequency - Transition 10MHz 10MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220