MJE4343 vs MJE4343G

Product Attributes

Part Number MJE4343 MJE4343G
Manufacturer NTE Electronics, Inc onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
MJE4343 MJE4343G
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 16 A 16 A
Voltage - Collector Emitter Breakdown (Max) 160 V 160 V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 2A, 16A 3.5V @ 2A, 16A
Current - Collector Cutoff (Max) 750µA 750µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 8A, 2V 15 @ 8A, 2V
Power - Max 125 W 125 W
Frequency - Transition 1MHz 1MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-218-3 TO-247-3
Supplier Device Package SOT-93 TO-247-3